Doping-Less SiC p-i-n Diode: Design and Investigation

P-n Junction Diode

Chemist, led the research for the molecular diode (In the semiconductor industry, called p-n junctions)

Characterization of an Mg-implanted GaN p-i-n Diode

A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.

Molybdenum and low-temperature annealing of a silicon power P-i-N diode

Please cite this article in press as: Vobecký J e (2010), doi:10.1016/j.microrel.2010.09.021 High-power PP–N–N diodes (VRRM = 2.5 kV, IFAV = 150 A) with sputtered Mo layer at anode were annealed in the range 550–800 C with and without the presence of radiation defects from helium implantation (10 MeV, 1 10 cm ). The devices were characterized using DLTS, spreading resistance, OCVD lifetime, lea...

Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers

UNLABELLED Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C ...

Qualifying composition dependent p and n self-doping in CH3NH3PbI3